E
ADVANCE INFORMATION
January 1998 Order Number: 290606-004
c110 High-Density Symmetrically-Blocked
Architecture
 64 128-Kbyte Erase Blocks (64 M)
 32 128-Kbyte Erase Blocks (32 M)
c110 5 V V
CC
Operation
 2.7 V I/O Capable
c110 Configurable x8 or x16 I/O
c110 120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
c110 Enhanced Data Protection Features
 Absolute Protection with
V
PEN
= GND
 Flexible Block Locking
 Block Erase/Program Lockout
during Power Transitions
c110 Industry-Standard Packaging
 µBGA* Package, SSOP and TSOP
Packages (32 M)
c110 Cross-Compatible Command Support
 Intel Basic Command Set
 Common Flash Interface
 Scaleable Command Set
c110 32-Byte Write Buffer
 6 µs per Byte Effective
Programming Time
c110 640,000 Total Erase Cycles (64 M)
320,000 Total Erase Cycles (32 M)
 10,000 Erase Cycles per Block
c110 Automation Suspend Options
 Block Erase Suspend to Read
 Block Erase Suspend to Program
c110 System Performance Enhancements
 STS Status Output
c110 Intel StrataFlash™ Memory Flash
Technology
Capitalizing on two-bit-per-cell technology, Intel StrataFlash™ memory products provide 2X the bits in 1X the
space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are
the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory

devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing 28F016SA/SV, 28F032SA, and Word-Wide FlashFile memory devices (28F160S5
and 28F320S5).
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX™ V process technology, Intel StrataFlash memory provides the
highest levels of quality and reliability.
INTEL StrataFlash™ MEMORY TECHNOLOGY
32 AND 64 MBIT
28F320J5 and 28F640J5