28F016XS
器件描述：16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
器件厂商：INTEL [Intel Corporation]
文件大小：1265.15KB，共54页
Sponsor by e络盟器件资料摘要：
E
November 1996 Order Number: 290532-004
c110 Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
c110 SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
c110 0.33 MB/sec Write Transfer Rate
c110 Configurable x8 or x16 Operation
c110 56-Lead TSOP and SSOP Type I
Package
c110 Backwards-Compatible with 28F008SA
Command-Set
c110 2 µA Typical Deep Power-Down
c110 1 mA Typical Active I
CC
Current in
Static Mode
c110 16 Separately-Erasable/Lockable
128-Kbyte Blocks
c110 1 Million Erase Cycles per Block
c110 State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible V
CC
and V
PP
voltages, extended cycling,
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V V
CC
. Programming voltage at 5V V
PP
minimizes external circuitry in minimal-chip, space
critical designs, while the 12.0V V
PP
option maximizes program/erase performance. Its high read performance
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV
process technology.
28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY
November 1996 Order Number: 290532-004
c110 Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
c110 SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
c110 0.33 MB/sec Write Transfer Rate
c110 Configurable x8 or x16 Operation
c110 56-Lead TSOP and SSOP Type I
Package
c110 Backwards-Compatible with 28F008SA
Command-Set
c110 2 µA Typical Deep Power-Down
c110 1 mA Typical Active I
CC
Current in
Static Mode
c110 16 Separately-Erasable/Lockable
128-Kbyte Blocks
c110 1 Million Erase Cycles per Block
c110 State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible V
CC
and V
PP
voltages, extended cycling,
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V V
CC
. Programming voltage at 5V V
PP
minimizes external circuitry in minimal-chip, space
critical designs, while the 12.0V V
PP
option maximizes program/erase performance. Its high read performance
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV
process technology.
28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY