E
December 1997 Order Number: 290207-012
8
c110 Flash Electrical Chip-Erase
 1 Second Typical Chip-Erase
c110 Quick-Pulse Programming Algorithm
 10 µs Typical Byte-Program
 2 Second Chip-Program
c110 100,000 Erase/Program Cycles
c110 12.0 V ±5% V
PP
c110 High-Performance Read
 90 ns Maximum Access Time
c110 CMOS Low Power Consumption
 10 mA Typical Active Current
 50 µA Typical Standby Current
 0 Watts Data Retention Power
c110 Integrated Program/Erase Stop Timer
c110 Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
c110 Noise Immunity Features
 ±10% V
CC
Tolerance
 Maximum Latch-Up Immunity
through EPI Processing
c110 ETOX™ Nonvolatile Flash Technology
 EPROM-Compatible Process Base
 High-Volume Manufacturing
Experience
c110 JEDEC-Standard Pinouts
 32-Pin Plastic Dip
 32-Lead PLCC
 32-Lead TSOP
(See Packaging Spec., Order #231369)
c110 Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on
address and data pins, from –1 V to V
CC
+ 1 V.
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F010 1024K (128K X 8) CMOS
FLASH MEMORY