28F008SA
器件描述:8 MBIT (1 MBIT x 8) FLASH MEMORY
文件大小:381.7KB,共26页
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器件资料摘要:
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Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
May 1994COPYRIGHT ' INTEL CORPORATION, 1995 Order Number: 271305-001
VE28F008
8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked
Architecture
— Sixteen 64 Kbyte Blocks
Y
Avionics Temperature Range
—
b
40§Cto
a
125§C
Y
Extended Cycling Capability
— 10K Block Erase Cycles
— 160K Block Erase
Cycles per Chip
Y
Automated Byte Write and Block Erase
— Command User Interface
— Status Register
Y
System Performance Enhancements
— RY/BY Status Output
— Erase Suspend Capability
Y
Very High-Performance Read
— 95 ns Maximum Access Time
Y
SRAM-Compatible Write Interface
Y
Hardware Data Protection Feature
— Erase/Write Lockout during Power
Transitions
Y
Industry Standard Packaging
— 40-Lead TSOP
Y
ETOX
TM
III Nonvolatile Flash
Technology
— 12V Byte Write/Block Erase
Y
Independent Software Vendor Support
— Microsoft* Flash File System (FFS)
Intel’s VE28F008 8-Mbit Flash File
TM
Memory revolutionizes the design of high performance and durable
mass storage memory systems for the Industrial, Avionics and Military markets. With its innovative features
like low power, blocked architecture, high read/write performance, and expanded temperature range, any
design, or mission, is free from the dependence on battery backed up memory or highly sensitive and slow
rotating media drives.
Using the VE28F008 in a PCMCIA 2.1 Flash Memory card, ATA drive or any size or shape module will allow
data, application, or operating systems to be updated or collected anywhere, and at anytime. This data on
demand feature ensures protection from obsolesce through field or in system software updates.
The VE28F008’s highly integrated Command User Interface and Write State Machine, decreases the size and
complexity of system software while providing high read, write and erase performance. The sixteen separately
erasable 64 Kbyte blocks along with a multiple write data protection system, provides assurance that highly
important data will be available when needed.
The VE28F008 is offered in a 40-lead TSOP (Thin Small Outline Package) which is capable of performing in
temperatures from
b
40§Cto
a
125§C. It employs advanced CMOS circuitry for systems requiring low power
consumption and noise immunity. The VE28F008’s 95 ns access time provides superior performance when
compared to magnetic mass storage
Manufactured on Intel’s 0.8 micron ETOX
TM
III process, the VE28F008 provides the highest levels of quality,
reliability and cost effectiveness.
*Microsoft is a trademark of Microsoft Corporation.