AT28C256
256K (32K x 8)
Paged
CMOS
E
2
PROM
Features
•
Fast Read Access Time - 150 ns
•
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
•
Fast Write Cycle Times
Page Write Cycle Time: 3 ms or 10 ms Maximum
1 to 64-Byte Page Write Operation
•
Low Power Dissipation
50 mA Active Current
200 µA CMOS Standby Current
•
Hardware and Software Data Protection
•
DATA Polling for End of Write Detection
•
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
•
Single 5V ± 10% Supply
•
CMOS and TTL Compatible Inputs and Outputs
•
JEDEC Approved Byte-Wide Pinout
•
Full Military, Commercial, and Industrial Temperature Ranges
Description
The AT28C256 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
(continued)
LCC, PLCC
Top View
Pin Name Function
A0 - A14 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
Pin Configurations
TSOP
Top View
PGA
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
CERDIP, PDIP,
FLATPACK, SOIC
Top View
0006F
AT28C256
2-217