27C512T
器件描述:512K (64K x 8-Bit) OTP EPROM
文件大小:139.66KB,共15页
Sponsor by e络盟
器件资料摘要:
1
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All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
512K (64K x 8-Bit) OTP EPROM
27C512T
©2003 Maxwell Technologies
All rights reserved.
06.24.03 Rev 4
FEATURES:
• 64K x 8-bit OTP EPROM organization
RAD-PAK® radiation-hardened against natural space
radiation
Total dose hardness:
- > 100 Krad (Si), depending upon space mission
Excellent Single Event Effects:
-SEL
TH
> 80 MeV/mg/cm2
-SEU
TH
> 80 Mev/mg/cm2
Package:
-32 pin RAD-PAK® flat pack
-32 pin RAD-PAK® DIP
Fast access time:
- 120, 150, 200 ns (max)
Low power dissipation:
- Active mode: 100 mW/MHz (typ)
- Standby mode: 10 µ W (typ)
Programming power supply:
- V
PP
= 12.5 V + 0.3 V
One-time programmable
Pin arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
DESCRIPTION:
Maxwell Technologies’ 27C512T high density 512-Kilobit one-
time programmable electrically programmable read only mem-
ory microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. The 27C512T
features fast address times and low power dissipation. The
27C512T offers high speed programming using page pro-
gramming mode.
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
x-Decoder
1024 x 1022
Memory Matrix
Input
Data
Control
Y- Gating
Y - Decoder
H
A0-A4 A10-A11
OE
PGM
A5-A9
V
CC
V
PP
V
SS
A12-A16
I/O0
I/O15
H
CE
: High Threshhold Inverter
Logic Diagram