24502BVA
器件描述:1024 x 4 CMOS RAM
文件大小:41.05KB,共7页
Sponsor by e络盟
器件资料摘要:
6-1
March 1997
HM-6514
1024 x 4 CMOS RAM
Features
• Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
• TTL Compatible Input/Output
• Common Data Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors
Required
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. The device utilizes
synchronous circuitry to achieve high performance and low
power operation.
On-chip latches are provided for addresses allowing efficient
interfacing with microprocessor systems. The data output
can be forced to a high impedance state for use in expanded
memory arrays.
Gated inputs allow lower operating current and also elimi-
nate the need for pull up or pull down resistors. The
HM-6514 is a fully static RAM and may be maintained in any
state for an indefinite period of time.
Data retention supply voltage and supply current are guaran-
teed over temperature.
Ordering Information
120ns 200ns 300ns TEMPERATURE RANGE PACKAGE PKG. NO.
HM3-6514S-9 HM3-6514B-9 HM3-6514-9 -40
o
C to +85
o
C PDIP E18.3
HM1-6514S-9 HM1-6514B-9 HM1-6514-9 -40
o
C to +85
o
C CERDIP F18.3
24502BVA - - - JAN# F18.3
8102402VA 8102404VA 8102406VA - SMD# F18.3
---40
o
C to +85
o
C CLCC J18.B
- - HM4-6514-B -55
o
C to +125
o
C J18.B
Pinouts
HM-6514 (PDIP, CERDIP)
TOP VIEW
HM-6514 (CLCC)
TOP VIEW
10
11
12
13
14
15
16
17
18
9
8
7
6
5
4
3
2
1 V
CC
A8
A9
DQ0
DQ1
DQ2
DQ3
A7
W
A6
A5
A4
A3
A0
A1
E
A2
GND
PIN DESCRIPTION
A Address Input
E Chip Enable
W Write Enable
D Data Input
Q Data Output
3
4
5
6
7
8 9 10 11
21 17
13
12
16
15
14
A3
A4
A0
A1
A2
GND
DQ3
W
E
A7A6
DQ0
DQ1
A9
DQ2
A8
A5 V
CC
18
File Number 2995.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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