A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 20 mA 55 V
BV
EBO
I
E
= 5.0 mA 3.5 V
h
FE
V
CE
= 5.0 V I
C
= 20 mA 10 ---
P
G

VSRW
η
C

V
CE
= 50 V P
OUT
= 175 W f = 1090 MHz

8.0

9.0

40

00:1
dB

%

NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
TPR175
DESCRIPTION:
The ASI TPR175 is a common base
transistor Designed for pulsed systems
in the frequency band 1030-1090 MHz.
FEATURES:
• Common Base
• Internal Matching Network
• P
G
= 8.0 dB at 175 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
12.5 A
V
CES
55 V
V
EBO
3.5 V
P
DISS
388 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.45 °C/W
PACKAGE STYLE


1 = Collector 2 = Base 3 = Emitter