A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 20 mA 60 V
BVCES IC = 25 mA RBE = 10 Ω 60 V
BVEBO IE = 20 mA 4.0 V
ICBO VCB = 50 V 12 mA
hFE VCE = 5 V IC = 1.0 A 20 120 ---
POUT
PG
h C
VCC = 50 V PIN = 13 W f = 960 to 1215 MHz
Pulse Width = 20 µS Duty Cycle = 5 %
250
6.0 7.0
40
W
dB
%
PACKAGE STYLE
RF POWER TRANSISTOR
TAN250A
DESCRIPTION:
The ASI TAN250A is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
IC 30 A
VCB 60 V
PDISS 575 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +200 OC
qJC 0.30 OC/W