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器件描述:RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
厂商主页:http://www.advancedsemiconductor.com/
文件大小:23.1KB
文件页数:1
PDF阅读:ASITAN250A.pdf (点击阅读器件资料)
摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE ? NORTH HOLLYWOOD, CA 91605 ? (818) 982-1200 ? FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 25 mA RBE = 10 ? 60 V BVEBO IE = 20 mA 4.0 V ICBO VCB = 50 V 12 mA hFE VCE = 5 V IC = 1.0 A 20 120 --- POUT PG h C VCC = 50 V PIN = 13 W f = 960 to 1215 MHz Pulse Width = 20 ?S Duty Cycle = 5 % 250 6.0 7.0 40 W dB % PACKAGE STYLE RF POWER TRANSISTOR TAN250A DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: ? Gold Metallization ? Hermetic Package ? Input/Output Matching MAXIMUM RATINGS IC 30 A VCB 60 V PDISS 575 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC qJC 0.30 OC/W
相关器件:TAN250
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