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ASISD1425

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:26.29KB,共2页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 50 V
BVCEO IC = 40 mA 25 V
BVCER IC = 50 mA RBE = 22 Ω 50 V
BVEBO IE = 10 mA 3.5 V
ICBO VCB = 24 V 2.0 mA
hFE VCE = 10 V IC = 200 mA 20 100 ---
Cob VCB = 24 V f = 1.0 MHz 40 50 pF
Pout
GP
h c
VCC = 24 V Pin = 5.3 W f = 960 MHz
30
7.5
45 50
W
dB
%
NPN SILICON RF POWER TRANSISTOR
SD1425
DESCRIPTION:
The ASI SD1425 is Designed for
Class AB Linear Base Station
Applications in the 800-900 MHz
Frequency Range.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Common Emitter
• Emitter Ballast Resistors
MAXIMUM RATINGS
IC 5.0 A
VCBO 50 V
VCES 45 V
PDISS 43 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
qJC 3.0 OC/W
PACKAGE STYLE .230 6L FLG
1,3,4,6 = EMITTER 2 = BASE
5 = COLLECTOR