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器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
厂商主页:http://www.advancedsemiconductor.com/
文件大小:26.29KB
文件页数:2
PDF阅读:ASISD1425.pdf (点击阅读器件资料)
摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE ? NORTH HOLLYWOOD, CA 91605 ? (818) 982-1200 ? FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 50 V BVCEO IC = 40 mA 25 V BVCER IC = 50 mA RBE = 22 ? 50 V BVEBO IE = 10 mA 3.5 V ICBO VCB = 24 V 2.0 mA hFE VCE = 10 V IC = 200 mA 20 100 --- Cob VCB = 24 V f = 1.0 MHz 40 50 pF Pout GP h c VCC = 24 V Pin = 5.3 W f = 960 MHz 30 7.5 45 50 W dB % NPN SILICON RF POWER TRANSISTOR SD1425 DESCRIPTION: The ASI SD1425 is Designed for Class AB Linear Base Station Applications in the 800-900 MHz Frequency Range. FEATURES INCLUDE: ? Gold Metalization ? Input Matching ? Common Emitter ? Emitter Ballast Resistors MAXIMUM RATINGS IC 5.0 A VCBO 50 V VCES 45 V PDISS 43 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC qJC 3.0 OC/W PACKAGE STYLE .230 6L FLG 1,3,4,6 = EMITTER 2 = BASE 5 = COLLECTOR
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