A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA 30 V
BV
CER
I
C
= 5.0 mA R
BE
= 10 Ω 55 V
BV
EBO
I
C
= 100 µA 3.5 V
I
CEX

V
CE
= 55 V V
BE
= -1.5 V
V
CE
= 30 V V
BE
= -1.5 V T
C
= 200
O
C
100
500
µA
I
CEO
V
CE
= 28 V 20 µA
I
EBO
V
EB
= 3.5 V 100 µA
h
FE

V
CE
= 5.0 V I
C
= 50 mA
I
C
= 360 mA
10
5.0
200
---
V
CE(SAT)
I
C
= 100 mA I
B
= 20 mA 1.0 V
f
t
V
CE
= 15 V I
C
= 50 mA f = 200 MHz 500 MHz
C
OB
V
CB
= 28 V f = 1.0 MHz 3.0 pF
G
PE
η
c

V
CC
= 28 V P
out
= 1.0 W f = 400 MHz
10
45
dB
%

NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3866


DESCRIPTION:
The ASI 2N3866 is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
C
400 mA
V
CE
30 V
P
DISS
5.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
35
O
C/W
PACKAGE STYLE TO-39


1 = Emitter 2 = Base
3 = Collector