1
Silicon MOS FETs (Small Signal)
unit: mm
Marking Symbol: 3O
Internal Connection
1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)
2.1±0.1
1.3±0.1
0.9±0.1
0.7±0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2±0.1
G
R
1
D
S
R
2
2SK665
Silicon N-Channel MOS FET
For switching
n Features
l High-speed switching
l Small drive current owing to high input inpedance
l High electrostatic breakdown voltage
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
20
8
100
200
150
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*
3
| Y
fs
|
V
OH
V
SL
R
1
+ R
2
*
1
t
on
*
2
t
off
*
2
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100m A, V
GS
= 0
I
D
= 100m A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200W
V
DD
= 5V, V
GS
= 5V, R
L
= 200W
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200W
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200W
*
1
Resistance ratio R
1
/R
2
= 1/50
*
2
t
on
, t
off
measurement circuit
*
3
Pulse measurement
min
40
20
1.5
20
4.5
100
typ Unit
m A
m A
V
V
W
mS
V
V
kW
m s
m s
max
10
80
3.5
50
1
200
1
1
V
out
V
DD
= 5V
V
GS
= 5V
50W
200W
100
m
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off