1
Silicon Junction FETs (Small Signal)
unit: mm
2SK663
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
n Features
l Low noise-figure (NF)
l High gate to drain voltage V
GDO
l S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
- 55
- 55
30
10
150
125
- 55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
g
m
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= - 30V, V
DS
= 0
I
G
= 100m A, V
DS
= 0
V
DS
= 10V, I
D
= 10m A
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100kW
f = 100Hz
min
1
55
2.5
max
12
- 10
- 5
Unit
mA
nA
V
V
mS
pF
pF
dB
typ
80
7.5
6.5
1.9
2.5
Marking Symbol (Example): 2B
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1: Source
2: Drain EIAJ: SC-70
3: Gate S-Mini Type Package (3-pin)
2.1±0.1
1.3±0.1
0.9±0.1
0.7±0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2±0.1