1
Silicon MOS FETs (Small Signal)
unit: mm
2SK664
Silicon N-Channel MOS FET
For switching
n Features
l High-speed switching
l S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
t
off
*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100m A, V
GS
= 0
I
D
= 100m A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200W
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200W
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
10
20
Unit
m A
m A
V
V
W
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
5
1
Marking Symbol: 3N
Internal Connection
G
D
S
1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)
2.1±0.1
1.3±0.1
0.9±0.1
0.7±0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2±0.1
V
out
V
DD
= 5V
V
GS
= 5V
50W
200W
100
m
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off