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器件描述：Silicon N-Channel MOS FET
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：36.43KB
文件页数：2
PDF阅读：2SK657.pdf (点击阅读器件资料)
摘要：
1
Silicon MOS FETs (Small Signal)
unit: mm
2SK657
Silicon N-Channel MOS FET
For switching
n Features
l High-speed switching
l M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
±100
±200
400
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
t
off
*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100m A, V
GS
= 0
I
D
= 100m A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200W
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200W
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
10
20
Unit
m A
m A
V
V
W
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
6
1.2
V
out
V
DD
= 5V
V
GS
= 5V
50W
200W
100
m
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off
Internal Connection
G
D
S
1: Gate
2: Drain
3: Source
EIAJ: SC-71
M Type Mold Package
6.9±0.1
0.55±0.1 0.45±0.05
1.0±0.1
1.0
2.5±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5±0.1
2.0±0.2
2.4±0.2
1.25±0.05
4.1±0.2
4.5±0.1
2.5 2.5
123
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