1
Silicon Junction FETs (Small Signal)
unit: mm
2SK65
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
n Features
l Diode is connected between gate and source
l Low noise voltage
1: Drain
2: Gate
3: Source
S Type Package
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
GDO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
12
- 12
2
2
2
20
- 10 to +70
- 20 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Symbol
I
DSS
*
g
m
NV
G
V1
*
G
V2
*
G
V3
*
Conditions
V
DS
= 4.5V, V
GS
= 0, R
S
= 2.2kW ± 1%
V
DS
= 4.5V, V
GS
= 0
R
S
= 2.2kW ± 1%, f = 1kHz
V
DS
= 4.5V, R
S
= 2.2kW ± 1%
C
G
= 10pF, A-curve
V
DS
= 4.5V, R
S
= 2.2kW ± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 12V, R
S
= 2.2kW ± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 1V, R
S
= 2.2kW ± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
min
0.04
300
max
0.8
4
Unit
mA
m S
m V
dB
dB
dB
*
I
DSS
rank classification and

G
V
value
typ
500
- 10
- 9.5
- 11
Runk
I
DSS
(mA)
G
V1
(dB)
G
V2
(dB)
D | G
V1
- G
V2
| (dB)
P
0.04 to 0.2
> - 13
> - 12
< 3
Q
0.15 to 0.8
> - 12
> - 11
< 3
4.5±0.1
0.45±0.05
2.0±0.2
0.8±0.12.54
4.0±0.2
10.5±0.5
1.0
123
0.7