2SK4028
器件描述：N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
器件厂商：NEC [NEC]
文件大小：130.65KB，共5页
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
JUNCTION FIELD EFFECT TRANSISTOR
2SK4028
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17529EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The 2SK4028 is suitable for converter of ECM.
FEATURES
• High gain
−1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Low noise
−115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Ultra thin thickness package
t = 0.3 mm TYP.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4028 3pXSOF03 (0812)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V
Gate to Drain Voltage VGDO −20 V
Drain Current ID 10 mA
Gate Current IG 10 mA
Total Power Dissipation PT 100 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg −55 to +125 °C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3
1.2 ±0.1
MAX. 0.33
0.8 ±0.1
1.2 ±0.1
0 to 0.02
0.13
+0.1
–0.05
+0.1
–0.05
0.2
+0.1
–0
2
3
1
0.40.4
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
JUNCTION FIELD EFFECT TRANSISTOR
2SK4028
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17529EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The 2SK4028 is suitable for converter of ECM.
FEATURES
• High gain
−1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Low noise
−115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Ultra thin thickness package
t = 0.3 mm TYP.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4028 3pXSOF03 (0812)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V
Gate to Drain Voltage VGDO −20 V
Drain Current ID 10 mA
Gate Current IG 10 mA
Total Power Dissipation PT 100 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg −55 to +125 °C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3
1.2 ±0.1
MAX. 0.33
0.8 ±0.1
1.2 ±0.1
0 to 0.02
0.13
+0.1
–0.05
+0.1
–0.05
0.2
+0.1
–0
2
3
1
0.40.4
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate