1
TO-220F
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 250
VDSX 220
Continuous Drain Current ID 14
Pulsed Drain Current ID(puls] ±56
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 14
Non-Repetitive EAS 301.1
Maximum Avalanche Energy
Repetitive EAR 3.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Peak Diode Recovery -di/dt -di/dt 100
Max. Power Dissipation PD 37
2.16
Operating and Storage Tch +150
Temperature range Tstg
Isolation Voltage VISO 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3913-01MR
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=7A VGS=10V
ID=7A VDS=25V
VCC=48V ID=7A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.378
58
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=125V
ID=14A
VGS=10V
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
A/µs
W
°C
°C
kVrms
250
3.0 5.0
25
2
100
220 280
510
780 1170
90 135
6.0 9.0
12 18
3 4.5
23 35
69
22 33
7.0 11
6.0 9.0
1.00 1.50
120 250
0.5 1.25
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Note *5
Tc=25°C
Ta=25°C
t=60sec f=60Hz
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=6A,L=14.1mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
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