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MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004

DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
• Super low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
• Low C iss: C iss = 5500 pF TYP.
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±84 A
Drain Current (pulse)
Note1
ID(pulse) ±336 A
Total Power Dissipation (TC = 25°C) PT1 146 W
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Energy
Note2
EAS 245 mJ
Repetitive Avalanche Current
Note3
IAR 49.5 A
Repetitive Avalanche Energy
Note3
EAR 245 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. RG = 25 Ω, Tch(peak) ≤ 150°C

ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3899-ZK TO-263 (MP-25ZK)

(TO-263)