1
TO-220AB
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 230
VDSX 230
Continuous Drain Current ID 40
Pulsed Drain Current ID(puls] ±160
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 40
Non-Repetitive EAS 633.1
Maximum Avalanche Energy
Repetitive EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD 270
2.02
Operating and Storage Tch +150
Temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3870-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS
VDS=230V VGS=0V
VDS=184V VGS=0V
VGS=±30V
ID=20A VGS=10V
ID=20A VDS=25V
VCC=180V ID=20A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.463
62
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=115V
ID=40A
VGS=10V
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
230
3.0 5.0
25
250
100
58 76
12 24
1880 2820
230 345
12 18
28 42
8.4 12.6
56 84
69
42.0 63.0
18.0 27.0
12.0 18.0
1.10 1.50
230
2.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 230V
Note *4
Tc=25°C
Ta=25°C
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
<
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<