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MOS FIELD EFFECT TRANSISTOR
2SK3794
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16778EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
The mark shows major revised points.

DESCRIPTION
The 2SK3794 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
• Low On-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
• Low C iss: C iss = 760 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±20 A
Drain Current (pulse)
Note1
ID(pulse) ±50 A
Total Power Dissipation (TC = 25°C) PT1 30 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 15 A
Single Avalanche Energy
Note2
EAS 23 mJ
Repetitive Avalanche Energy
Note3
EAR 23 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
3. IAR ≤ 15 A, Tch ≤ 150°C

ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3794
TO-251 (MP-3)
2SK3794-Z
TO-252 (MP-3Z)
(TO-251)



(TO-252)