2SK3760
2004-02-26 1

10.5 max
3.84± 0.2
6.6 max.

2.7

15.6 max.

13.4 min.

1.5 max
0.81 max
2.54
3.9
max.

4.7 max
1.3
0.45
2.7
1 2 3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ )
2SK3760

Switching Regulator Applications


• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 600 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 3.5
Drain current Pulse (t = 1 ms)
(Note 1) IDP 14
A
Drain power dissipation (Tc = 25°C) PD 60 W
Single pulse avalanche energy
(Note 2) EAS 6.3 mJ
Avalanche current IAR 3.5 A
Repetitive avalanche energy (Note 3) EAR 6 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.08 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

unit：ｍｍ
1

3

2
Weight : 2.0g(typ.)
JEDEC

JEITA

TOSHIBA

TO-220AB
SC-46

―


1. Gate
2. Drain(HEAT SINK)
3. Source

1.5 max
2.54
3.9 max

13.4 min

15.6 max

3.84± 0.2 10.5 max
6.6 max

4.7 max
1.3
0.45
2.7
0.81