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MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16378EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
2002
The mark shows major revised points.

DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A)
• Low C iss: C iss = 8400 pF TYP.
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±75 A
Drain Current (pulse)
Note1
ID(pulse) ±300 A
Total Power Dissipation (TC = 25°C) PT1 40 W
Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 67 A
Single Avalanche Energy
Note2
EAS 450 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V




ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3715 Isolated TO-220


(Isolated TO-220)