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MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
The mark a35 shows major revised points.
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
excellent switching characteristics, designed for high
voltage applications such as high intensity discharge
lamp drive.
FEATURES
• Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 400 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±10 A
Drain Current (pulse)
Note1
ID(pulse) ±34 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 100 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 10 A
Single Avalanche Energy
Note2
EAS 8mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W
Channel to Ambient Thermal Resistane Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3668-ZK TO-263 (MP-25ZK)
(TO-263)
a35
a35