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2002
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
•4.5V drive available.
•Low on-state resistance,
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
•Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
•Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V) VDSS 20 V
Gate to source voltage (VDS = 0 V) VGSS ±20 V
Drain current (DC) (TC = 25°C) ID(DC) ±65 A
Drain current (pulse)
Note1
ID(pulse) ±260 A
Total power dissipation (TA = 25°C) PT1 2.0 W
Total power dissipation (TC = 25°C) PT2 25 W
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 35 A
Single Avalanche Energy
Note2
EAS 122 mJ
Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting T
ch
= 25°C, V
DD
= 10 V, R
G
= 25 Ω, V
GS
= 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3659 Isolated TO-220