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MOS FIELD EFFECT TRANSISTOR
2SK3643
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15971EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark shows major revised points.

DESCRIPTION
The 2SK3643 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.

FEATURES
• Low on-state resistance
RDS(on)1 = 6 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• Low Ciss: Ciss = 2400 pF TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±64 A
Drain Current (pulse)
Note1
ID(pulse) ±256 A
Total Power Dissipation (TC = 25°C) PT1 40 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS 40 A
Single Avalanche Energy
Note2
EAS 160 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V



ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3643-ZK TO-252 (MP-3ZK)

(TO-252)