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MOS FIELD EFFECT TRANSISTOR
2SK3641
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15969EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3641-ZK TO-252 (MP-3ZK)


DESCRIPTION
The 2SK3641 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.

FEATURES
• Low on-state resistance
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
• Low Ciss: Ciss = 930 pF TYP.
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±36 A
Drain Current (pulse)
Note1
ID(pulse) ±140 A
Total Power Dissipation (TC = 25°C) PT1 29 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 19 A
Single Avalanche Energy
Note2
EAS 36 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V

(TO-252)