2SK3576
器件描述：N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
器件厂商：NEC [NEC]
文件大小：66.99KB，共8页
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2001
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15939EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3576 SC-96 (Mini Mold Thin Type)
Marking: XK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±12 V
Drain Current (DC) (TA = 25°C) ID(DC) ±4.0 A
Drain Current (pulse)
Note1
ID(pulse) ±16 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1 2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©
2001
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15939EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3576 SC-96 (Mini Mold Thin Type)
Marking: XK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±12 V
Drain Current (DC) (TA = 25°C) ID(DC) ±4.0 A
Drain Current (pulse)
Note1
ID(pulse) ±16 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C)
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1 2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain