2SK3556
器件资料摘要：
1
P4
Item Symbol Ratings Unit
Drain-source voltage VDS 250
VDSX *5 220
Continuous drain current ID ±25
Pulsed drain current ID(puls] ±100
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 25
Maximum Avalanche Energy EAS *1 372
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.02
Tc=25
°C
135
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A
ID=12.5A VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.926
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=12A
VGS=10V
L=100
µ
H Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
250
3.0 5.0
25
250
10 100
75 100
816
2000 3000
220 330
15 30
20 30
30 45
60 90
20 30
44 66
14 21
16 24
25
1.10 1.65
0.45
1.5
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
< <<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 250V *5 VGS=-30V *6 t=60sec f=60Hz
P4
Item Symbol Ratings Unit
Drain-source voltage VDS 250
VDSX *5 220
Continuous drain current ID ±25
Pulsed drain current ID(puls] ±100
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 25
Maximum Avalanche Energy EAS *1 372
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.02
Tc=25
°C
135
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A
ID=12.5A VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
0.926
62.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=12A
VGS=10V
L=100
µ
H Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
250
3.0 5.0
25
250
10 100
75 100
816
2000 3000
220 330
15 30
20 30
30 45
60 90
20 30
44 66
14 21
16 24
25
1.10 1.65
0.45
1.5
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
< <<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 250V *5 VGS=-30V *6 t=60sec f=60Hz