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©

2001
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15617EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 5900 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 75 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±83 A
Drain Current (pulse)
Note1
ID(pulse) ±260 A
Total Power Dissipation (TC = 25°C) PT 100 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 52 A
Single Avalanche Energy
Note2
EAS 250 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3511 TO-220AB
2SK3511-S TO-262
2SK3511-ZJ TO-263
2SK3511-Z TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)