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MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001

DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.

FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)
• Low gate charge
QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)
• Built-in G-S protection diode
• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±16 V
Drain Current (DC) (TC = 25°C) ID(DC) ±22 A
Drain Current (pulse)
Note1
ID(pulse) ±45 A
Total Power Dissipation (TC = 25°C) PT1 20 W
Total Power Dissipation
Note2
PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note3
IAS 10 A
Single Avalanche Energy
Note3
EAS 10 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V

ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3507-ZK TO-252 (MP-3ZK)