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MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.

2001

DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
• Low on-state resistance
RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)
RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A)
• Low Ciss: Ciss = 2300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0V) VDSS 100 V
Gate to Source Voltage (VDS = 0V) VGSS ±20 V
Drain Current (DC) ID(DC) ±28 A
Drain Current (Pulse)
Note1
ID(pulse) ±60 A
Total Power Dissipation (TC = 25°C) PT 40 W
Total Power Dissipation (TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 25 A
Single Avalanche Energy
Note2
EAS 62.5 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V

(TO-251)




(TO-252)


ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3483 TO-251 (MP-3)
2SK3483-Z TO-252 (MP-3Z)