©

2001
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±80 A
Drain Current (Pulse)
Note
ID(pulse) ±320 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 76 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3467 TO-220AB
2SK3467-ZK TO-263(MP-25ZK)
(TO-220AB)
(TO-263)