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©

2000
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14754EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
FEATURES
• Low gate charge
QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 800 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TC = 25°C) ID(DC) ±5.0 A
Drain Current (pulse)
Note1
ID(pulse) ±20 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 50 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 5.0 A
Single Avalanche Energy
Note2
EAS 73.8 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 a161 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3457 Isolated TO-220