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©

1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3434
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No. D14603EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A)
• Low Ciss: Ciss = 2100 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±48 A
Drain Current (pulse)
Note1
ID(pulse) ±192 A
Total Power Dissipation (TC = 25°C) PT 56 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS 28 A
Single Avalanche Energy
Note2
EAS 78 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 2.23 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3434 TO-220AB
2SK3434-S TO-262
2SK3434-Z TO-220SMD
(TO-220AB)
(TO-262)
(TO-220SMD)
a35
a35
a35
The mark a35 shows major revised points.
a35
a35