1N957B...1N963B
Vishay Telefunken
Rev. A3, 13-Nov-98 1 (3)
Silicon Z–Diodes
Features
C0068 Very sharp reverse characteristic
C0068 Very high stability
C0068 Low reverse current level
C0068 V
Z
–tolerance ± 5%
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation T
L
C012075C0176C P
V
500 mW
Z–current I
Z
P
V
/V
Z
mA
Junction temperature T
j
200 C0176C
Storage temperature range T
stg
–65...+200 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=9.5mm (3/8”), T
L
=constant R
thJA
300 K/W
Electrical Characteristics
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=200mA V
F
1.1 V