HIGH SPEED SILICON SWITCHING DIODE IN914, B
IN916
250mW
DO- 35
Glass Axial Package
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNIT
Reverses Voltage ( Continuous) V
R
75 V
Repetitive Peak Reverse Voltage V
RRM
100 V
Average Forward Current
T
A
=25ºC I
F (AV)
75 mA
T
A
=150ºC I
F (AV)
10 mA
Forward Current (D.C.) I
F
75 mA
Repetitive Peak Forward Current I
FRM
225 mA
Non Repetitive Peak Surge Current
tp=1sec I
FSM
500 mA
Power Dissipation P
tot
250 mW
Storage Temperature T
stg
-65 to +200 ºC
Operating ambient Temperature T
amb
-65 to +175 ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Forward Voltage V
F
IN914/916 I
F
=10 1.0 V
1N914B I
F
=100mA, 1.0 V
I
F
=5mA, 0.62 0.72 V
Reverse Breakdown Voltage V
(BR)R
I
R
=100µA 100 V
Reverse CurrentI
R
V
R
= 20V 25 nΑ
V
R
= 75V 5 µA
V
R
= 20V, T
j
=150ºC
Diode Capacitance C
d
V
R
=0, f=1MHz 2.5 pF
Reverse Recovery Time t
rr
I
F
=10mA to I
R
=10mA 8ns
R
L
=100 Ω
Measured at I
R
=1mA
I
F
=10mA to I
R
=60mA 4ns
R
L
=100 Ω
Measured at I
R
=1mA
Transys
Electronics
LIM ITED