Switching Diode
1N914
Silicon epitaxial planar type
Features
Low power loss, high efficiency
High reliability
High speed ( trr < 4 ns )
Mechanical data
Case : Glass, DO-35
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.13 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Non-Repetitive peak reverse voltage VRM 100 V
Reverse voltage VR 75 V
Peak forward surge current tp= 1 us IFSM 1.0 A
Repetitive peak forward voltage IFRM 250 mA
Forward current IF 150 mA
Average forward current VR = 0 IFAV 75 mA
Power dissipation PV 250 mW
Junction temperature Tj 175 oC
Storage temperature TSTG -55 +175 oC
Formosa MS
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
IF = 5mA VF 0.62 0.72 V
IF = 10mA VF 0.86 1.00 V
VR = 20V IR 25 nA
VR = 20V , Tj = 150 oC IR 50 uA
VR = 75V IR 5.0 uA
Breakdown current IR = 100uA , TP/T = 0.01 TP = 0.3ms V(BR) 100 V
Diode capacitance VR = 0 , f = 1MHz , VHF = 50mV CD 4.0 pF
Rectification efficiency VHF = 2V , f = 100MHz nR 45 %
IF = IR = 10mA , IRR = 1mA trr 8 ns
Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM trr 4 ns
Forward voltage
Reverse current
DO-35
Dimensions in inches and (millimeters)
1.141(29.0)
1.102(28.0)
.169(4.30)
.146(3.70)
.022(.55)
.018(.45)
DIA.
.083(2.10)
.051(1.30)
DIA.
1.141(29.0)
1.102(28.0)