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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N914

器件描述:SMALL SIGNAL DIODE
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:29.53KB,共1页
Sponsor by e络盟
器件资料摘要:
1N914
SMALL SIGNAL DIODE
FEATURES
currency1 Silicon Epitaxial Planar Diode
currency1 For general purpose and switching.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Peak Reverse Voltage VRM 100 V
Maximum Average Rectified Current Io 75 mA
Maximum Power Dissipation at Tamb = 25 °C Ptot 500 mW
Maximum Junction Temperature Tj 200 °C
Maximum Forward Voltage Drop at IF = 10 mA VF 1.0 V
Maximum Reverse Current at VR = 20 V IR 25 nA
VR = 75 V 5.0 m A
Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V,
RL = 100 W , to Irr = 1 mA
trr 4.0 ns
Maximum Capacitance at VR=0, f=1.0 MHZ Ctot 4.0 pF
11/09/98
Dimensions in inches and (millimeters)
DO-35
m
in.
1.
083 (27.
5)
m
in.
1.
083 (27.
5)
m
a
x
.
.
150 (3.
8)
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)