1N6817
(MSASC25W100K)
1N6817R
(MSASC25W100KR)

100 Volts
25 Amps
Features
• Tungsten schottky barrier
• Oxide passivated structure
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6817) and reverse
polarity (strap is cathode: 1N6817R)
• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
screening i.a.w. Microsemi internal procedure PS11.50 available
DESCRIPTION

SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 100 Volts
Working Peak Reverse Voltage VRWM 100 Volts
DC Blocking Voltage VR 100 Volts
Average Rectified Forward Current, Tc≤ 145°C I
F(ave)

25 Amps
derating, forward current, Tc≥ 145°C
dIF/dT (3.3) Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
FSM

120 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz I
RRM

2 Amp
Junction Temperature Range
T
j

-55 to +175 °C
Storage Temperature Range
T
stg

-55 to +175 °C
Thermal Resistance, Junction to Case: 1N6817
1N6817R
θ
JC

1.25
1.35
°C/W
Maximum Ratings @ 25°C (unless otherwise specified)
Mechanical Outline
ThinKey™2
Datasheet# MSC1034B August, 2000

2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW REVERSE
LEAKAGE
SCHOTTKY DIODE