MSASC25W45K
(1N6816)
MSASC25W45KR
(1N6816R)
45 Volts
25 Amps
Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6816) and reverse
polarity (strap-to-cathode: 1N6816R)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 45 Volts
Working Peak Reverse Voltage VRWM 45 Volts
DC Blocking Voltage VR 45 Volts
Average Rectified Forward Current, Tc≤ 145°C IF(ave) 25 Amps
derating, forward current, Tc≥ 145°C dIF/dT (3.3) Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 125 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz IRRM 2 Amp
Junction Temperature Range Tj -55 to +175 °C
Storage Temperature Range Tstg -55 to +175 °C
Thermal Resistance, Junction to Case: 1N6816
1N6816R
θJC 1.25
1.35
°C/W
Maximum Ratings @ 25 C (unless otherwise specified)
Mechanical Outline
ThinKey™2
Datasheet# MSC1033A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
SCHOTTKY DIODE