1N645-1
器件描述:SILICON RECTIFIER
文件大小:67.55KB,共2页
Sponsor by e络盟
器件资料摘要:
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
OJEC
):
250 ˚C/W maximum
THERMAL IMPEDANCE: (Z
O
JX
): 35
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
• AVAILABLE IN JAN, JANTX, AND JANTXV
PERMIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
1N645-1
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25°C
150 mA @ 150°C
Derating: 2.0 mA/°C From 25°C to 150°C
6.0 mA/°C From 150°C to 175°C
TYPE V
RSM
V
RWM
I
FSM
V
F
CAP @
T
P
= 1/120 s @400mA V
R = 4V
T
A
= 25°C
V (pk) V (pk) A V
DC
pF
1N645-1 270225 5 0.8 - 1.020
TYPE I
R1 at
V
RWM
I
R2 at
V
RWM
I
R3 at
V
RSM
T
A
= 25°C T
A
= 150°C T
A
= 25°C
µA µA µA
1N645-1 0.05 25 50