1N6266
器件描述：GaAs INFRARED EMITTING DIODE
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：207.98KB，共7页
Sponsor by e络盟器件资料摘要：
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
Ø0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched to the
TO-18 series phototransistor
Hermetically sealed package
High irradiance level
(*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
*Storage Temperature T
STG
-65 to +150 °C
*Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
*Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
*Continuous Forward Current I
F
100 mA
*Forward Current (pw, 1µs; 200Hz) I
F
10 A
*Reverse Voltage V
R
3V
*Power Dissipation (T
A
= 25°C)
(1)
P
D
170 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6266
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
*Peak Emission Wavelength I
F
= 100 mA DP 935 — 955 nm
Emission Angle at 1/2 Power 0 — ±10 — Deg.
Forward Voltage I
F
= 100 mA VF ——1.7 V
*Reverse Leakage Current V
R
= 3 V I
R
10 µA
*Radiant Intensity I
F
= 100 mA Ie 25 —— mW/sr
Rise Time 0-90% of output tr — 1.0 — µs
Fall Time 100-10% of output tf — 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300278 3/12/01 1 OF 7 www.fairchildsemi.com
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
Ø0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched to the
TO-18 series phototransistor
Hermetically sealed package
High irradiance level
(*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
*Storage Temperature T
STG
-65 to +150 °C
*Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
*Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
*Continuous Forward Current I
F
100 mA
*Forward Current (pw, 1µs; 200Hz) I
F
10 A
*Reverse Voltage V
R
3V
*Power Dissipation (T
A
= 25°C)
(1)
P
D
170 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6266
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
*Peak Emission Wavelength I
F
= 100 mA DP 935 — 955 nm
Emission Angle at 1/2 Power 0 — ±10 — Deg.
Forward Voltage I
F
= 100 mA VF ——1.7 V
*Reverse Leakage Current V
R
= 3 V I
R
10 µA
*Radiant Intensity I
F
= 100 mA Ie 25 —— mW/sr
Rise Time 0-90% of output tr — 1.0 — µs
Fall Time 100-10% of output tf — 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300278 3/12/01 1 OF 7 www.fairchildsemi.com