FMS 1N60/1N60P
Formosa MicroSemi CO., LTD.
www.formosams.com Rev. 2, 22-Nov-2002
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Schottky Barrier Diode

Features
1. High reliability
2. Low reverse current and low forward voltage

Applications
Low current rectification and high speed switching

Construction
Silicon epitaxial planar

Absolute Maximum Ratings
T
j
=25¥
Parameter Test Conditions Type Symbol Value Unit
1N60 V
RRM
40 V Repetitive peak reverse voltage
1N60P V
RRM
45 V
1N60 I
FSM
150 mA Peak forward surge current t
p
&Ä 1 s
1N60P I
FSM
500 mA
1N60 I
F
30 mA Forward continuous current T
a
=25¥
1N60P I
F
50 mA
Storage temperature range T
stg
-65~+125 ¥

Maximum Thermal Resistance
T
j
=25¥
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mm€50mm€1.6mm R
thJA
250 K/W