1N5820 – 1N5822 1 of 3 © 2002 Won-Top Electronics
1N5820 – 1N5822
3.0A SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability A B A
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications C
D
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current (Note 1) @T
L
= 90°C IO 3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) @T
L
= 75°C
IFSM 80 A
Forward Voltage @I
F
= 3.0A
@I
F
= 9.4A
VFM
0.475
0.850
0.50
0.90
0.525
0.950
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
IRM
2.0
20
mA
Typical Junction Capacitance (Note 2) Cj 250 pF
Typical Thermal Resistance Junction to Ambient RG01JA 20 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-201AD
Dim Min Max
A 25.4 —
B 8.50 9.50
C 1.20 1.30
D 5.0 5.60
All Dimensions in mm