1N5820
器件描述：SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：168.51KB，共6页
Sponsor by e络盟器件资料摘要：
1Rectifier Device Data
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0065C0120C0105C0097C0108 C0076C0101C0097C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
• Extremely Low v
F
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
Non–Repetitive Peak Reverse Voltage V
RSM
24 36 48 V
RMS Reverse Voltage V
R(RMS)
14 21 28 V
Average Rectified Forward Current (2)
V
R(equiv)
C0118 0.2 V
R(dc)
, T
L
= 95°C
(R
θJA
= 28°C/W, P.C. Board Mounting, see Note 2)
I
O
3.0 A
Ambient Temperature
Rated V
R
(
dc)
, P
F(AV)
= 0
R
θJA
= 28°C/W
T
A
90 85 80 °C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75°C)
I
FSM
80 (for one cycle) A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
C004265 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) T
J(pk)
150 °C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
θJA
28 °C/W
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by 1N5820/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0049C0078C0053C0056C0050C0048
C0049C0078C0053C0056C0050C0049
C0049C0078C0053C0056C0050C0050
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
1N5820 and 1N5822 are
Motorola Preferred Devices
Rev 2
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115 C0068C0097C0116C0097 C0083C0104C0101C0101C0116
C0065C0120C0105C0097C0108 C0076C0101C0097C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
• Extremely Low v
F
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
Non–Repetitive Peak Reverse Voltage V
RSM
24 36 48 V
RMS Reverse Voltage V
R(RMS)
14 21 28 V
Average Rectified Forward Current (2)
V
R(equiv)
C0118 0.2 V
R(dc)
, T
L
= 95°C
(R
θJA
= 28°C/W, P.C. Board Mounting, see Note 2)
I
O
3.0 A
Ambient Temperature
Rated V
R
(
dc)
, P
F(AV)
= 0
R
θJA
= 28°C/W
T
A
90 85 80 °C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75°C)
I
FSM
80 (for one cycle) A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
C004265 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) T
J(pk)
150 °C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
θJA
28 °C/W
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by 1N5820/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0049C0078C0053C0056C0050C0048
C0049C0078C0053C0056C0050C0049
C0049C0078C0053C0056C0050C0050
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
1N5820 and 1N5822 are
Motorola Preferred Devices
Rev 2