1N5817M
器件描述:1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
文件大小:59.09KB,共2页
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器件资料摘要:
DS13001 Rev. D-2 1 of 2 1N5817M/1N5818M/1N5819M
c183 High Current Capability
c183 Low Forward Voltage Drop
c183 Guard Ring for Transient Protection
c183 Glass Package for High Reliability
c183 Packaged for Surface Mount Applications
Mechanical Data
Features
c183 Case: MELF, Glass
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Polarity: Cathode band
c183 Approx Weight: 0.25 gram
c183 Mounting Position: Any
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
1N5817M / 1N5818M / 1N5819M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Measured at V
R
= 4.0V, f = 1.0MHz.
Characteristic Symbol 1N5817M 1N5818M 1N5819M Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Maximum Average Forward Rectified Current
@T
T
= 90°C (Note 1)
I
O 1.0 A
Maximum Forward Surge Current. Half Cycle @60Hz
Superimposed on rated load, JEDEC Method
I
FSM 25 A
Maximum Forward Voltage Drop @ I
F
= 1.0A
@ I
F
= 3.0A
V
F
0.450
0.750
0.550
0.875
0.600
0.900
V
Maximum Reverse Leakage Current @ V
RRM
@ T
A
= 25°C
@ T
A
= 100°C
I
R
1.0
10
mA
Typical Thermal Resistance, Junction to Ambient (Note 1) Rc113JA 130 K/W
Typical Junction Capacitance (Note 2) Cj 110 pF
Storage and Operating Temperature Range Tj,TSTG -60 to +125 °C
MELF
Dim Min Max
A 4.80 5.20
B 2.40 2.60
C 0.55 Nominal
All Dimensions in mm
C
A
B