1N5817-1N5819
1N5817-1N5819, Rev. A1
1N5817 - 1N5819
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
A
= 25°C unless otherwise noted
2001 Fairchild Semiconductor Corporation
Features
• 1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.

Symbol

Parameter

Device

Units
1N5817 1N5818 1N5819
V
RRM
Maximum Peak Repetitive Reverse Voltage 20 30 40 V
V
RMS
Maximum RMS Voltage 14 21 28 V
V
R
DC Reverse Voltage (Rated V
R
) 20 30 40 V
I
RM
Maximum Instantaneous Reverse Current T
A
= 25°C
@ rated V
R
T
A
= 100°C
0.5
10
mA
mA
V
FM
Maximum Instantaneous Forward Voltage @ 1.0 A
@ 3.0 A
450
750
550
875
600
900
mV
mV
C Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
110 pF

DO-41
COLOR BAND DENOTES CATHODE

Symbol

Parameter

Value

Units
I
F(AV)
Average Rectified Current
.375 " lead length @ T
A
= 90°C
1.0 A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

25

A
P
D
Total Device Dissipation
Derate above 25°C
1.25
12.5
W
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 80 °C/W
T
stg
Storage Temperature Range -65 to +125 °C
T
J
Operating Junction Temperature -65 to +125 °C