1N5817
器件描述：1.0A SCHOTTKY BARRIER RECTIFIER
器件厂商：DIODES [Diodes Incorporated]
文件大小：44.37KB，共2页
Sponsor by e络盟器件资料摘要：
DS23001 Rev. 6 - 2 1 of 2 1N5817-1N5819
www.diodes.com
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A AB
C
D
DO-41 Plastic
Dim Min Max
A 25.40 c190
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
c183 Schottky Barrier Chip
c183 Guard Ring Die Construction for
Transient Protection
c183 Low Power Loss, High Efficiency
c183 High Surge Capability
c183 High Current Capability and Low Forward
Voltage Drop
c183 For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
c183 Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
c183 Case: Molded Plastic
c183 Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
c183 Polarity: Cathode Band
c183 Weight: 0.3 grams (approx)
c183 Mounting Position: Any
c183 Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current
(Note 1) @ T
L
= 90c176C
I
O 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM 25 A
Forward Voltage (Note 2) @ I
F
= 1.0A
@ I
F
= 3.0A
V
FM
0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Leakage Current @T
A
= 25c176C
at Rated DC Blocking Voltage (Note 2) @ T
A
= 100c176C
I
RM
1.0
10
mA
Typical Total Capacitance (Note 3) CT 110 pF
Typical Thermal Resistance Junction to Lead (Note 4) Rc113JL 15
c176C/W
Typical Thermal Resistance Junction to Ambient Rc113JA 50
Operating and Storage Temperature Range Tj, TSTG -65 to +125 c176C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
www.diodes.com
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A AB
C
D
DO-41 Plastic
Dim Min Max
A 25.40 c190
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
c183 Schottky Barrier Chip
c183 Guard Ring Die Construction for
Transient Protection
c183 Low Power Loss, High Efficiency
c183 High Surge Capability
c183 High Current Capability and Low Forward
Voltage Drop
c183 For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
c183 Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
c183 Case: Molded Plastic
c183 Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
c183 Polarity: Cathode Band
c183 Weight: 0.3 grams (approx)
c183 Mounting Position: Any
c183 Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current
(Note 1) @ T
L
= 90c176C
I
O 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM 25 A
Forward Voltage (Note 2) @ I
F
= 1.0A
@ I
F
= 3.0A
V
FM
0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Leakage Current @T
A
= 25c176C
at Rated DC Blocking Voltage (Note 2) @ T
A
= 100c176C
I
RM
1.0
10
mA
Typical Total Capacitance (Note 3) CT 110 pF
Typical Thermal Resistance Junction to Lead (Note 4) Rc113JL 15
c176C/W
Typical Thermal Resistance Junction to Ambient Rc113JA 50
Operating and Storage Temperature Range Tj, TSTG -65 to +125 c176C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.