SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL UNITS
Maximum Repetitive Peak Reverse Voltage
V
RRM V
Maximum RMS Voltage
V
RMS V
Maximum DC Blocking Voltage
V
DC V
Maximum Average Forward Rectified Current
(9.5mm lead length, at T
L
=90
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 1.0A DC) V
F
V
Maximum DC Reverse Current T
a
=25
o
C mA
(at rated DC blocking voltage) T
a
=100
o
C mA
Typical Junction Capacitance (Note 1)
C
J
pF
Typical Thermal Resistance (Note 2)
R
θ
(ja)
o
C/W
Storage and Operation Junction Temperature
T
STG
,T
J
o
C
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V
dc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
http://www.sse-diode.com
1N5817 THRU 1N5819
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 40V CURRENT: 1.0A
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS 1N5817 1N5818 1N5819
20 30 40
14 21 28
20 30 40
I
F(AV)
1.0
I
R
1.0
10.0
A
I
FSM
25 A
110
50
-65 to +125
0.45 0.55 0.6
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
DO - 41